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Keynote: Semiconductor Components for Terahertz Electronics

NOV
11
2020
11. NOV 2020

Keynote electronica Conferences > Wireless Congress > Opening Session Day 2

11:55-12:20 h | Virtual

The Terahertz frequency range between 300 GHz and 3 THz, located between radio frequencies and the far infrared, offers a vast amount of untapped bandwidth for future wireless communication systems. Besides wireless, emerging THz applications include material sensing, medical imaging, high precision radar measurements, and security screening. Common to all THz applications ist he need for low-cost, high-performing and robust components which can be integrated into commercial systems. Electronic THz chips based on silicon germanium, RF-CMOS and the more exotic semiconductor indium phosphide are currently being developed, with promising performance and energy efficiency. Complementary optoelectronic components such as photomixers and uni-traveling carrier photodiodes exhibit extreme bandwidth in THz generation and detection based on short optical laser pulses and optical wavelength mixing.

Subjects: Wireless

Speaker: Prof. Dr. Nils Weimann (University of Duisburg-Essen)

Type: Keynote

Speech: English

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The Terahertz frequency range between 300 GHz and 3 THz, located between radio frequencies and the far infrared, offers a vast amount of untapped bandwidth for future wireless communication systems. Besides wireless, emerging THz applications include material sensing, medical imaging, high precision radar measurements, and security screening. Common to all THz applications ist he need for low-cost, high-performing and robust components which can be integrated into commercial systems. Electronic THz chips based on silicon germanium, RF-CMOS and the more exotic semiconductor indium phosphide are currently being developed, with promising performance and energy efficiency. Complementary optoelectronic components such as photomixers and uni-traveling carrier photodiodes exhibit extreme bandwidth in THz generation and detection based on short optical laser pulses and optical wavelength mixing.

Prof. Dr. Nils Weimann

Prof. Dr. Nils Weimann

University of Duisburg-Essen

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Informations

Prof. Dr. Nils Weimann
Prof. Dr. Nils Weimann

Location

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

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