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RF MEMS Switch Technology Driving 5G Solutions

NOV
10
2020
10. NOV 2020

Lecture electronica Conferences > Wireless Congress > Session 2: Technology I

12:25-12:55 h | Virtual

Analog Devices MEMS switch technology is an ideal solution for digital and RF applications where a low insertion loss, wide bandwidth, DC capable switch in a small form factor is required. This paper discusses new MEMS switch technology developments that are targeting wide bandwidth 5G test equipment applications. The MEMS switch technology can realize RF bandwidths to 67GHz and beyond in die format. The switch is an ohmic contact MEMS design so is fully functional down to 0Hz (DC) displaying excellent linearity with low parasitic capacitance. Increasingly with 5G chipset development Automatic Test Equipment requires low loss DC parametric and very high-speed digital/RF signal switching functionality. Traditionally relays have been used. The MEMS switch technology with its DC capably and wide RF bandwidth can perform the same function is a much smaller and easier to use form factor with exceptionally low insertion loss up to millimetre wave frequencies. A DC to 44GHz SP2T MEMS switch will be discussed. It has been realised in a 5mm x 4mm x 0.9mm 24-pin surface mount laminate package. An insertion loss of less than -1.5dB up to 44GHz was achieved. The SPDT configuration is a reflective-open type switch. Also discussed will be a 67GHz SP2T MEMS switch die targeting higher millimetre wave communication and automatic test equipment applications.

Subjects: Wireless

Speaker: Eric Carty

Type: Lecture

Speech: English

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Analog Devices MEMS switch technology is an ideal solution for digital and RF applications where a low insertion loss, wide bandwidth, DC capable switch in a small form factor is required. This paper discusses new MEMS switch technology developments that are targeting wide bandwidth 5G test equipment applications. The MEMS switch technology can realize RF bandwidths to 67GHz and beyond in die format. The switch is an ohmic contact MEMS design so is fully functional down to 0Hz (DC) displaying excellent linearity with low parasitic capacitance. Increasingly with 5G chipset development Automatic Test Equipment requires low loss DC parametric and very high-speed digital/RF signal switching functionality. Traditionally relays have been used. The MEMS switch technology with its DC capably and wide RF bandwidth can perform the same function is a much smaller and easier to use form factor with exceptionally low insertion loss up to millimetre wave frequencies. A DC to 44GHz SP2T MEMS switch will be discussed. It has been realised in a 5mm x 4mm x 0.9mm 24-pin surface mount laminate package. An insertion loss of less than -1.5dB up to 44GHz was achieved. The SPDT configuration is a reflective-open type switch. Also discussed will be a 67GHz SP2T MEMS switch die targeting higher millimetre wave communication and automatic test equipment applications.

Speaker

Eric Carty

Eric Carty received his M.Sc. degree in experimental physics from the National University Maynooth, Ireland in 1998. Before joining Analog Devices he spent a total of 10 years working as an RF passive component design engineer. Since 2009 he has been a senior applications engineer in Analog Devices focusing on RF switches and MEMS technology research and development. He currently manages the switch and multiplexor applications department in Analog Devices.

Eric Carty

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Speaker

Eric Carty

Eric Carty received his M.Sc. degree in experimental physics from the National University Maynooth, Ireland in 1998. Before joining Analog Devices he spent a total of 10 years working as an RF passive component design engineer. Since 2009 he has been a senior applications engineer in Analog Devices focusing on RF switches and MEMS technology research and development. He currently manages the switch and multiplexor applications department in Analog Devices.

Eric Carty

Location

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

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