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Achieving optimal performance: Minimizing EMI and switching loss for SiC FETs

NOV
12
2020
12. NOV 2020

Lecture Power Electronics Forum > Power Semiconductors & Components

13:40-14:00 h | Virtual

UnitedSiC FETs, like their SiC and GaN counterparts are yielding breakthrough performance in hard switching and soft-switching power converters. In this presentation, we’ll discuss how to get the most performance out of SiC devices while still meeting the EMI and overshoot limitations considered by most designers.

Subjects: Power Electronics

Speaker: Peter Losee (UnitedSiC)

Type: Lecture

Speech: English

UnitedSiC FETs, like their SiC and GaN counterparts are yielding breakthrough performance in hard switching and soft-switching power converters. In this presentation, we’ll discuss how to get the most performance out of SiC devices while still meeting the EMI and overshoot limitations considered by most designers.

Speaker,
UnitedSiC

Peter Losee

Peter Losee

UnitedSiC

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Informations

Speaker,
UnitedSiC

Peter Losee
Peter Losee
Director of Technology Development

Location

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

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