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Cutting-edge SiGe Rectifiers: enhancing safe operating area for high temperature, high frequency applications

NOV
12
2020
12. NOV 2020

Lecture Power Electronics Forum > Power Semiconductors & Components

11:20-11:40 h | Virtual

Discrete rectifiers in power electronics are decisive components that affect the efficiency, reliability, and the dimensions of important units like the "on board charger" in EV cars. In the recent years silicon carbide (SiC) Schottky diodes has been established as state-of-the-art rectifier technology in power electronics. However, SiC rectifiers are usually used at 650V and beyond and they come with a premium price compared to silicon-based solutions. Nevertheless, there are numerous power electronics applications below 650V that require a cost-effective solution without any compromise on the reliability and performance of the device. Nexperia has developed a new rectifier technology based on silicon germanium (SiGe) for applications in the 100-200V range. In this talk the static and dynamic behavior of the novel SiGe rectifier are discussed and compared to other technologies including the thermal stability and switching behavior of SiGe rectifiers.

Subjects: Power Electronics

Speaker: Dr. Reza Behtash (Nexperia)

Type: Lecture

Speech: English

Discrete rectifiers in power electronics are decisive components that affect the efficiency, reliability, and the dimensions of important units like the "on board charger" in EV cars. In the recent years silicon carbide (SiC) Schottky diodes has been established as state-of-the-art rectifier technology in power electronics. However, SiC rectifiers are usually used at 650V and beyond and they come with a premium price compared to silicon-based solutions. Nevertheless, there are numerous power electronics applications below 650V that require a cost-effective solution without any compromise on the reliability and performance of the device. Nexperia has developed a new rectifier technology based on silicon germanium (SiGe) for applications in the 100-200V range. In this talk the static and dynamic behavior of the novel SiGe rectifier are discussed and compared to other technologies including the thermal stability and switching behavior of SiGe rectifiers.

Speaker,
Nexperia

Dr. Reza Behtash

Dr. Reza Behtash

Nexperia

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Informations

Speaker,
Nexperia

Dr. Reza Behtash
Dr. Reza Behtash
Application Marketing Manager

Location

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

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