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Lecture Power Electronics Forum > Power Semiconductors & Components
11:20-11:40 h | Virtual
Discrete rectifiers in power electronics are decisive components that affect the efficiency, reliability, and the dimensions of important units like the "on board charger" in EV cars. In the recent years silicon carbide (SiC) Schottky diodes has been established as state-of-the-art rectifier technology in power electronics. However, SiC rectifiers are usually used at 650V and beyond and they come with a premium price compared to silicon-based solutions. Nevertheless, there are numerous power electronics applications below 650V that require a cost-effective solution without any compromise on the reliability and performance of the device. Nexperia has developed a new rectifier technology based on silicon germanium (SiGe) for applications in the 100-200V range. In this talk the static and dynamic behavior of the novel SiGe rectifier are discussed and compared to other technologies including the thermal stability and switching behavior of SiGe rectifiers.
Subjects: Power Electronics
Speaker: Dr. Reza Behtash (Nexperia)
Type: Lecture
Speech: English
Discrete rectifiers in power electronics are decisive components that affect the efficiency, reliability, and the dimensions of important units like the "on board charger" in EV cars. In the recent years silicon carbide (SiC) Schottky diodes has been established as state-of-the-art rectifier technology in power electronics. However, SiC rectifiers are usually used at 650V and beyond and they come with a premium price compared to silicon-based solutions. Nevertheless, there are numerous power electronics applications below 650V that require a cost-effective solution without any compromise on the reliability and performance of the device. Nexperia has developed a new rectifier technology based on silicon germanium (SiGe) for applications in the 100-200V range. In this talk the static and dynamic behavior of the novel SiGe rectifier are discussed and compared to other technologies including the thermal stability and switching behavior of SiGe rectifiers.
Speaker,
Nexperia