calender
Date & Time
Search
Datum
{{range.dates[index].day}}
{{range.dates[index].date}}
Time
Mornings Noon Afternoons Evenings
  • from
  • to
  • o'clock
Topic
Event
Properties
{{item.name}}
{{item.name}}
Exhibition venue

(please choose the desired areas)

Lecture language
Format

Event database

The event database contains all event-related information for the digital electronica conference and supporting event program.

Back to the EventList

Parallel multiple MOSFETs using optimized current sharing technology

NOV
09
2020
09. NOV 2020

Lecture Power Electronics Forum > Power Management

15:40-16:00 h | Virtual

In High Power Applications, such as Motor Control, one MOSFET may not be enough – hence paralleling MOSFETs becomes a necessary solution. To achieve a reliable design that shares and stresses the devices equally, it is common to request semiconductor manufacturers to provide parts with matched threshold voltages. However, even with very tightly controlled production facilities there is an inevitable spread in the threshold voltage across the wafer. Any effort to provide matched Vth will require special screening and sorting that can result in yield loss, thus affecting the cost of the devices supplied. Nexperia have developed a new and unique MOSFET with improved current sharing capability when used in parallel which no longer relies on matched threshold voltages.

Subjects: Power Electronics

Speaker: Stein Nesbakk (Nexperia)

Type: Lecture

Speech: English

In High Power Applications, such as Motor Control, one MOSFET may not be enough – hence paralleling MOSFETs becomes a necessary solution. To achieve a reliable design that shares and stresses the devices equally, it is common to request semiconductor manufacturers to provide parts with matched threshold voltages. However, even with very tightly controlled production facilities there is an inevitable spread in the threshold voltage across the wafer. Any effort to provide matched Vth will require special screening and sorting that can result in yield loss, thus affecting the cost of the devices supplied. Nexperia have developed a new and unique MOSFET with improved current sharing capability when used in parallel which no longer relies on matched threshold voltages.

Speaker,
Nexperia

Stein Nesbakk

Stein Nesbakk

Nexperia

Show Profile

Informations

Speaker,
Nexperia

Stein Nesbakk
Stein Nesbakk
Application Engineer

Location

Eingang
Nord-West
ICM
Eingang
Nord
Eingang
West
Atrium
Eingang
Nord-Ost
Eingang
Ost
Conference
Center Nord
Freigelände
C1
C2
C3
C4
C5
C6
B0
B1
B2
B3
B4
B5
B6
A1
A2
A3
A4
A5
A6

More Events