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Silicon Carbide: the power revolution for the future e-powertrain

NOV
09
2020
09. NOV 2020

Lecture electronica Conferences > electronica Automotive Conference > Technology Trends for E-Drives

12:40-13:10 h | Virtual

  • Application mapping of power semiconductors and their characteristics
  • Wide band gap technologies for the use in automotive applications
  • Silicon Carbide as an enabler for the power revolution in the e-powertrain
  • Outlook on manufacturing and vertical integration of SiC to enter high volume automotive platforms

Subjects: Automotive

Speaker: Manuel Gärtner (STMircroelectronics)

Type: Lecture

Speech: English

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IGBTs and HV Super Junction MOSFETs, based on well-established and mature silicon technologies, will progressively be replaced by wide bandgap semiconductor materials in power applications. To optimize the future e-powertrain in battery electric vehicles (BEV) and plug in hybrid cars (PHEV) such new semiconductor materials are being introduced. Typical applications include traction inverters, power DCDC converters and onboard chargers, that will significantly benefit from the outstanding performance of wide bandgap materials. Key parameters are for example switching speed, the characteristic of unipolar device compared with bipolar IGBTs and higher maximum operating junction temperature. Silicon Carbide (SiC) and Gallium Nitride (GaN) are the 2 very promising technologies that based on their maturity and device characteristics will be key for power applications in industrial as well as automotive applications. According to their physical characteristics these devices can be mapped according to the key requirements of different applications. After more than 20 years of research and development AECQ101 grade Silicon Carbide (SiC) MOSFETs are now realizing strong penetration into the automotive market. Already millions of active devices (MOSFETs) are present, being designed in by very innovative early adopters. The advantage is realized by a total cost of ownership approach, considering not only the device cost but the total cost including increased mileage, downsizing of cooling systems, weight saving as well as strongly decreased form factors amongst other benefits. Also, legislation resp bonus programs that sponsor higher efficiency push the introduction of wide band gap semiconductors. Inherent advantages of the SiC technology will be explained and how these advantages benefit automotive applications. As silicon carbide is relatively new for automotive, an overview on manufacturing strategy and vertical integration will also be explained, to provide to the market devices that are compliant to the stringent requirements coming from car manufacturers.

Content from image-api
Manuel Gärtner

Name:

Manuel Gärtner

 

Company:

STMICROELECTRONICS

BAHNHOFSTRASSE 18

D-85609 ASCHHEIM-DORNACH 

 

Brief Biography:

Manuel Gärtner joined STMicroelectronics Munich in 1999 and is working as a Senior Team Leader and Marketing Manager for ASSP/ASIC and Power Discrete Devices. On top he is leading the strategic program Wide Bandgap materials for Automotive applications in the EMEA region. Before joining STMicroelectronics, he worked in Infineon Technologies as development engineer for Smart Power Products and as a research engineer in the “Fraunhofer Institut für Siliziumtechnologie” and at the university of Berlin. He published several articles (>25) on automotive power electronics and is holding different patents (>5). He is member of the EEHE Scientific Advisory Board, the SIA POWER TRAIN & ELECTRONICS scientific committee for Power Electronics and in the ECPE he is representing STMicroelectronics as principal partner.

Manuel Gärtner

STMircroelectronics

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 title=
Manuel Gärtner

Name:

Manuel Gärtner

 

Company:

STMICROELECTRONICS

BAHNHOFSTRASSE 18

D-85609 ASCHHEIM-DORNACH 

 

Brief Biography:

Manuel Gärtner joined STMicroelectronics Munich in 1999 and is working as a Senior Team Leader and Marketing Manager for ASSP/ASIC and Power Discrete Devices. On top he is leading the strategic program Wide Bandgap materials for Automotive applications in the EMEA region. Before joining STMicroelectronics, he worked in Infineon Technologies as development engineer for Smart Power Products and as a research engineer in the “Fraunhofer Institut für Siliziumtechnologie” and at the university of Berlin. He published several articles (>25) on automotive power electronics and is holding different patents (>5). He is member of the EEHE Scientific Advisory Board, the SIA POWER TRAIN & ELECTRONICS scientific committee for Power Electronics and in the ECPE he is representing STMicroelectronics as principal partner.

Manuel Gärtner
Senior Team Leader and Marketing Manager

Location

Eingang
Nord-West
ICM
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Nord
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Atrium
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Freigelände
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