(P12-11) From Fast Chargers to AI Data Centers: High-Voltage PowiGaN Delivers Clear Benefits from 200 W to >4 kW

The development of WBG semiconductors for power conversion was accelerated by the need for smallest size (highest efficiency) converters for rapid charging. The significant switching advantage provided by GaN HEMTs reduced heat by 30% which translated into smaller size converters which in turn made chargers that used using GaN switches more desirable. At the other end of the power range AI Data Centers are pushing for smallest size and highest efficiency in order to keep pace with emerging computing demand. In this presentation we will look at the benefits of GaN for high and mid-power applications looking to demonstrate the importance of increasing voltage rating and the cost-benefit calculation which is critical for the successful adoption of GaN and SiC WBG devices for new applications in power conversion.