Dr. Junjie An

Junjie An, R&D Director at Wuxi Xichan Weixin, holds a Ph.D. in Physical Electronics from the University of Tsukuba. He leads automotive-grade SGT MOSFET, IGBT, and SiC MOSFET development, having broken through 8-inch ultra-thin wafer technology— with 11 papers and 22 invention patents to his credit.