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Sprecher

Kenichi Yoshimochi

Japan

 at ROHM Co., Ltd.

Biografie

Kenichi Yoshimochi graduated from Kyushu University in 1998 with a degree in Materials Science and Engineering. He joined ROHM in 1998 and was engaged in device design, process design, and PKG design in the field of low-voltage MOSFETs, contributing to product commercialization. Since 2016, he has been working on the development of GaN power devices as a project leader and is currently in charge of product design of GaN power stages including driver ICs.

Sprecher dieser Vorträge

16.11.2022 von 10:00 - 10:30

1.1 New GaN solutions with EcoGaN